MICROCHIP-Single FETs, MOSFETs-TN0604N3-G-P013

Description

Drain to Source Voltage;40V/Number;1 N-channel/Pd - Power Dissipation;740mW/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;190pF


40V 750mΩ@10V 1 N-channel 740mW TO-92-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Number;1 N-channel/Pd - Power Dissipation;740mW/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;190pF40V 750mΩ@10V 1 N-channel 740mW TO-92-3 Single... Read more

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    Description

    Drain to Source Voltage;40V/Number;1 N-channel/Pd - Power Dissipation;740mW/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;190pF


    40V 750mΩ@10V 1 N-channel 740mW TO-92-3 Single FETs, MOSFETs RoHS

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