MICROCHIP-Single FETs, MOSFETs-TN0610N3-G-P013

Description

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);1.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;150pF


100V 1.5Ω@10V 1 N-channel 1W TO-92-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);1.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;150pF100V 1.5Ω@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);1.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;150pF


    100V 1.5Ω@10V 1 N-channel 1W TO-92-3 Single FETs, MOSFETs RoHS

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