MICROCHIP-Single FETs, MOSFETs-TN2106K1-G

Description

Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);280mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;35pF/Output Capacitance(Coss);17pF


N-Channel 60V 280mA 360mW Surface Mount SOT-23-3

Product form

Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);280mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;35pF/Output... Read more

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    Description

    Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);280mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;35pF/Output Capacitance(Coss);17pF


    N-Channel 60V 280mA 360mW Surface Mount SOT-23-3

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