MICROCHIP-Single FETs, MOSFETs-TP2535N3-G

Description

Drain to Source Voltage;350V/Number;1 P-Channel/Pd - Power Dissipation;740mW/RDS(on);25Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Ciss-Input Capacitance;125pF


350V 25Ω@10V 1 P-Channel 740mW TO-92-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;350V/Number;1 P-Channel/Pd - Power Dissipation;740mW/RDS(on);25Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Ciss-Input Capacitance;125pF350V 25Ω@10V 1 P-Channel 740mW TO-92-3 Single... Read more

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    Description

    Drain to Source Voltage;350V/Number;1 P-Channel/Pd - Power Dissipation;740mW/RDS(on);25Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Ciss-Input Capacitance;125pF


    350V 25Ω@10V 1 P-Channel 740mW TO-92-3 Single FETs, MOSFETs RoHS

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