MICROCHIP-Single FETs, MOSFETs-TP2640N3-G

Description

Drain to Source Voltage;400V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1W/RDS(on);15Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);180mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;300pF/Output Capacitance(Coss);50pF


P-Channel 400V Through Hole TO-92-3

Product form

Drain to Source Voltage;400V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1W/RDS(on);15Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);180mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;300pF/Output... Read more

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    Description

    Drain to Source Voltage;400V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1W/RDS(on);15Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);180mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;300pF/Output Capacitance(Coss);50pF


    P-Channel 400V Through Hole TO-92-3

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