MICROCHIP-Single FETs, MOSFETs-VN0104N3-G-P013

Description

Drain to Source Voltage;40V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;65pF


40V 2.5Ω@10V 1 N-channel 1W TO-92-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;65pF40V 2.5Ω@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;40V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;65pF


    40V 2.5Ω@10V 1 N-channel 1W TO-92-3 Single FETs, MOSFETs RoHS

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