micron-Memory (ICs)-MT29F4G08ABBFAH4-AIT:F

Description

Interface;Parallel/Voltage - Supply;1.7V~1.95V/Memory Size;4Gbit/Operating temperature;-40℃~+85℃/Standby Supply Current;100uA/Program / Erase Cycles;100,000 cycles/Block Erase Time(tBE);2ms/Data Retention - TDR (Year);10 Years/Page Programming Time (Tpp);240us


4Gbit 1.7V~1.95V Parallel 63-VFBGA (9x11) Memory (ICs) RoHS

Product form

Interface;Parallel/Voltage - Supply;1.7V~1.95V/Memory Size;4Gbit/Operating temperature;-40℃~+85℃/Standby Supply Current;100uA/Program / Erase Cycles;100,000 cycles/Block Erase Time(tBE);2ms/Data Retention - TDR (Year);10 Years/Page Programming Time... Read more

$14.07 Excl. VAT

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    Description

    Interface;Parallel/Voltage - Supply;1.7V~1.95V/Memory Size;4Gbit/Operating temperature;-40℃~+85℃/Standby Supply Current;100uA/Program / Erase Cycles;100,000 cycles/Block Erase Time(tBE);2ms/Data Retention - TDR (Year);10 Years/Page Programming Time (Tpp);240us


    4Gbit 1.7V~1.95V Parallel 63-VFBGA (9x11) Memory (ICs) RoHS

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