micron-Memory (ICs)-NAND04GR3B2DN6E

Description

/Voltage - Supply;1.7V~1.95V/Memory Size;4Gbit/Standby Supply Current;10uA/Program / Erase Cycles;100,000 cycles/Block Erase Time(tBE);1.5ms/Page Programming Time (Tpp);200us


1.7V~1.95V 4Gbit TSOP-48 Memory (ICs) RoHS

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/Voltage - Supply;1.7V~1.95V/Memory Size;4Gbit/Standby Supply Current;10uA/Program / Erase Cycles;100,000 cycles/Block Erase Time(tBE);1.5ms/Page Programming Time (Tpp);200us1.7V~1.95V 4Gbit TSOP-48 Memory (ICs) RoHS Read more

$63.12 Excl. VAT

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    Description

    /Voltage - Supply;1.7V~1.95V/Memory Size;4Gbit/Standby Supply Current;10uA/Program / Erase Cycles;100,000 cycles/Block Erase Time(tBE);1.5ms/Page Programming Time (Tpp);200us


    1.7V~1.95V 4Gbit TSOP-48 Memory (ICs) RoHS

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