micron-Memory (ICs)-NAND16GW3D2BN6E

Description

/Voltage - Supply;2.7V~3.6V/Memory Size;16Gbit/Operating temperature;-40℃~+85℃/Standby Supply Current;10uA/Program / Erase Cycles;5,000 cycles/Block Erase Time(tBE);2.5ms/Data Retention - TDR (Year);5 Years/Page Programming Time (Tpp);800us


16Gbit 2.7V~3.6V TSOP-48 Memory (ICs) RoHS

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/Voltage - Supply;2.7V~3.6V/Memory Size;16Gbit/Operating temperature;-40℃~+85℃/Standby Supply Current;10uA/Program / Erase Cycles;5,000 cycles/Block Erase Time(tBE);2.5ms/Data Retention - TDR (Year);5 Years/Page Programming Time... Read more

$253.41 Excl. VAT

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    Description

    /Voltage - Supply;2.7V~3.6V/Memory Size;16Gbit/Operating temperature;-40℃~+85℃/Standby Supply Current;10uA/Program / Erase Cycles;5,000 cycles/Block Erase Time(tBE);2.5ms/Data Retention - TDR (Year);5 Years/Page Programming Time (Tpp);800us


    16Gbit 2.7V~3.6V TSOP-48 Memory (ICs) RoHS

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