Minos-Gate Drivers-IR2110S-MNS

Description

Load Type;MOSFET;IGBT/Driven Configuration;Half-Bridge/High Level Delay Time;130ns/Low Level Delay Time;130ns/Operating Temperature;-40℃~+125℃/Fall Time;17ns/Rise Time;25ns/Current - Output High(IOH);4A/Voltage - Supply;10V~20V/Current - Output Low(IOL);4A/Features;Under Voltage Protection/Quiescent Current;40uA


Half-Bridge Gate Driver IC MOSFET IGBT SOIC-16-300mil

Product form

Load Type;MOSFET;IGBT/Driven Configuration;Half-Bridge/High Level Delay Time;130ns/Low Level Delay Time;130ns/Operating Temperature;-40℃~+125℃/Fall Time;17ns/Rise Time;25ns/Current - Output High(IOH);4A/Voltage - Supply;10V~20V/Current - Output Low(IOL);4A/Features;Under... Read more

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    Description

    Load Type;MOSFET;IGBT/Driven Configuration;Half-Bridge/High Level Delay Time;130ns/Low Level Delay Time;130ns/Operating Temperature;-40℃~+125℃/Fall Time;17ns/Rise Time;25ns/Current - Output High(IOH);4A/Voltage - Supply;10V~20V/Current - Output Low(IOL);4A/Features;Under Voltage Protection/Quiescent Current;40uA


    Half-Bridge Gate Driver IC MOSFET IGBT SOIC-16-300mil

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