Minos-Single FETs, MOSFETs-MLS65R580P

Description

Drain to Source Voltage;650V/Gate Charge(Qg);8.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;26W/RDS(on);500mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);3.1pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;410.8pF


N-Channel 650V 8A 26W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);8.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;26W/RDS(on);500mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);3.1pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;410.8pFN-Channel 650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);8.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;26W/RDS(on);500mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);3.1pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;410.8pF


    N-Channel 650V 8A 26W Through Hole TO-220F

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