Minos-Single FETs, MOSFETs-MPT028N10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);131nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);2.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;9.2nF


N-Channel 100V 180A 250W Through Hole TO-220

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);131nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);2.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);131nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);2.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;9.2nF


    N-Channel 100V 180A 250W Through Hole TO-220

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