MOT-Single FETs, MOSFETs-MOT30N02C

Description

Drain to Source Voltage;20V/Gate Charge(Qg);23.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;900pF


20V 8mΩ@4.5V 1 N-channel 40W TO-251 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);23.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);23.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;900pF


    20V 8mΩ@4.5V 1 N-channel 40W TO-251 Single FETs, MOSFETs RoHS

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