Nexperia-Bipolar Transistor Arrays, Pre-Biased-PEMB10,115

Description

Number;2 PNP Pre-Biased Transistors/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/type;PNP/DC Current Gain;100/Emitter-Base Voltage VEBO;5V/Input Voltage (VI(on)@Ic,Vce);1.1V@5mA,300mV/Voltage - Input(Max)(VI(off));500mV/Input Resistor;2.2kΩ/Resistor Ratio;21/Operating Temperature;-65℃~+150℃/Vce Saturation(VCE(sat));100mV/Transition frequency(fT);180MHz/Current - Collector Cutoff;100nA


Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased Transistors 50V 100mA 300mW Surface Mount SOT-666

Product form

Number;2 PNP Pre-Biased Transistors/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/type;PNP/DC Current Gain;100/Emitter-Base Voltage VEBO;5V/Input Voltage (VI(on)@Ic,Vce);1.1V@5mA,300mV/Voltage -... Read more

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    Description

    Number;2 PNP Pre-Biased Transistors/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/type;PNP/DC Current Gain;100/Emitter-Base Voltage VEBO;5V/Input Voltage (VI(on)@Ic,Vce);1.1V@5mA,300mV/Voltage - Input(Max)(VI(off));500mV/Input Resistor;2.2kΩ/Resistor Ratio;21/Operating Temperature;-65℃~+150℃/Vce Saturation(VCE(sat));100mV/Transition frequency(fT);180MHz/Current - Collector Cutoff;100nA


    Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased Transistors 50V 100mA 300mW Surface Mount SOT-666

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