Nexperia-Bipolar Transistor Arrays, Pre-Biased-PEMD20,115

Description

Number;1 NPN Pre-Biased, 1 PNP Pre-Biased/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/DC Current Gain;30/Emitter-Base Voltage VEBO;10V/Input Voltage (VI(on)@Ic,Vce);1.6V/Voltage - Input(Max)(VI(off));1.2V/Input Resistor;2.2kΩ/Resistor Ratio;1/Operating Temperature;-65℃~+150℃/Vce Saturation(VCE(sat));150mV/Current - Collector Cutoff;100nA


Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount SOT-666-6

Product form

Number;1 NPN Pre-Biased, 1 PNP Pre-Biased/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/DC Current Gain;30/Emitter-Base Voltage VEBO;10V/Input Voltage... Read more

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    Description

    Number;1 NPN Pre-Biased, 1 PNP Pre-Biased/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/DC Current Gain;30/Emitter-Base Voltage VEBO;10V/Input Voltage (VI(on)@Ic,Vce);1.6V/Voltage - Input(Max)(VI(off));1.2V/Input Resistor;2.2kΩ/Resistor Ratio;1/Operating Temperature;-65℃~+150℃/Vce Saturation(VCE(sat));150mV/Current - Collector Cutoff;100nA


    Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount SOT-666-6

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