Nexperia-Single FETs, MOSFETs-2N7002BKMB,315

Description

Drain to Source Voltage;60V/Gate Charge(Qg);500pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;360mW/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;33pF


60V 1Ω@10V 1 N-channel 360mW SOT-883B Single FETs, MOSFETs RoHS

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Drain to Source Voltage;60V/Gate Charge(Qg);500pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;360mW/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);500pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;360mW/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;33pF


    60V 1Ω@10V 1 N-channel 360mW SOT-883B Single FETs, MOSFETs RoHS

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