Drain to Source Voltage;20V/Gate Charge(Qg);6.5nC@4.5V/Type;P-Channel/Pd - Power Dissipation;890mW/RDS(on);170mΩ@4.5V/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));950mV20V 170mΩ@4.5V 890mW Single FETs, MOSFETs RoHS Read more

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