Drain to Source Voltage;50V/Gate Charge(Qg);350pC@5V/Type;P-Channel/Pd - Power Dissipation;260mW/RDS(on);7.5Ω@10V/Current - Continuous Drain(Id);150mA/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;36pF50V 7.5Ω@10V 260mW Single FETs, MOSFETs... Read more

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