Nexperia-Single FETs, MOSFETs-PHKD3NQ10T,518

Description

Drain to Source Voltage;100V/Gate Charge(Qg);21nC@10V/Number;2 N-Channel/Pd - Power Dissipation;2W/RDS(on);70mΩ@10V/Operating Temperature -;-65℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);61pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;633pF


100V 70mΩ@10V 2 N-Channel 2W SOT-96 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;100V/Gate Charge(Qg);21nC@10V/Number;2 N-Channel/Pd - Power Dissipation;2W/RDS(on);70mΩ@10V/Operating Temperature -;-65℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);61pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);21nC@10V/Number;2 N-Channel/Pd - Power Dissipation;2W/RDS(on);70mΩ@10V/Operating Temperature -;-65℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);61pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;633pF


    100V 70mΩ@10V 2 N-Channel 2W SOT-96 Single FETs, MOSFETs RoHS

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