Nexperia-Single FETs, MOSFETs-PMCM950ENEZ

Description

Drain to Source Voltage;60V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;780mW;12.5W/RDS(on);41mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);62pF/Current - Continuous Drain(Id);6.1A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.16nF


60V 41mΩ@10V 1 N-channel WLCSP-9(1.5x1.5) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;780mW;12.5W/RDS(on);41mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);62pF/Current - Continuous Drain(Id);6.1A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;780mW;12.5W/RDS(on);41mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);62pF/Current - Continuous Drain(Id);6.1A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.16nF


    60V 41mΩ@10V 1 N-channel WLCSP-9(1.5x1.5) Single FETs, MOSFETs RoHS

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