Nexperia-Single FETs, MOSFETs-PMCPB5530X

Description

Drain to Source Voltage;20V/Gate Charge(Qg);21.7nC@4.5V/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.17W/RDS(on);70mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);74pF/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;660pF/Output Capacitance(Coss);87pF


20V 70mΩ@4.5V 1.17W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);21.7nC@4.5V/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.17W/RDS(on);70mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);74pF/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);21.7nC@4.5V/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.17W/RDS(on);70mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);74pF/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;660pF/Output Capacitance(Coss);87pF


    20V 70mΩ@4.5V 1.17W Single FETs, MOSFETs RoHS

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