Nexperia-Single FETs, MOSFETs-PMH260UNEH

Description

Drain to Source Voltage;20V/Gate Charge(Qg);950pC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;660mW/RDS(on);310mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;41pF/Output Capacitance(Coss);10pF


20V 310mΩ@4.5V 1 N-channel 660mW DFN0606-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);950pC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;660mW/RDS(on);310mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);950pC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;660mW/RDS(on);310mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;41pF/Output Capacitance(Coss);10pF


    20V 310mΩ@4.5V 1 N-channel 660mW DFN0606-3 Single FETs, MOSFETs RoHS

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