Nexperia-Single FETs, MOSFETs-PMH600UNEH

Description

Drain to Source Voltage;20V/Gate Charge(Qg);310pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;625mW/RDS(on);620mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.6pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;21.3pF


20V 620mΩ@4.5V 1 N-channel 625mW SOT-8001-3 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;20V/Gate Charge(Qg);310pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;625mW/RDS(on);620mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.6pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input... Read more

$3.30 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);310pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;625mW/RDS(on);620mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.6pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;21.3pF


    20V 620mΩ@4.5V 1 N-channel 625mW SOT-8001-3 Single FETs, MOSFETs RoHS

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