Nexperia-Single FETs, MOSFETs-PMN120ENEAX

Description

Drain to Source Voltage;60V/Gate Charge(Qg);6nC@10V/Number;1 N-channel/Pd - Power Dissipation;670mW;7.5W/RDS(on);123mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;196pF


60V 123mΩ@10V 1 N-channel SOT-457 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);6nC@10V/Number;1 N-channel/Pd - Power Dissipation;670mW;7.5W/RDS(on);123mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input... Read more

$3.90 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);6nC@10V/Number;1 N-channel/Pd - Power Dissipation;670mW;7.5W/RDS(on);123mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;196pF


    60V 123mΩ@10V 1 N-channel SOT-457 Single FETs, MOSFETs RoHS

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