Nexperia-Single FETs, MOSFETs-PMN120ENEX

Description

Drain to Source Voltage;60V/Gate Charge(Qg);7.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.4W;6.25W/RDS(on);123mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17pF/Current - Continuous Drain(Id);3.1A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;275pF


60V 123mΩ@10V 1 N-channel SOT-457 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);7.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.4W;6.25W/RDS(on);123mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17pF/Current - Continuous Drain(Id);3.1A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);7.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.4W;6.25W/RDS(on);123mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17pF/Current - Continuous Drain(Id);3.1A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;275pF


    60V 123mΩ@10V 1 N-channel SOT-457 Single FETs, MOSFETs RoHS

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