Nexperia-Single FETs, MOSFETs-PMN25ENEH

Description

Drain to Source Voltage;30V/Gate Charge(Qg);18nC@10V/Number;1 N-channel/Pd - Power Dissipation;560mW/RDS(on);24mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);94pF/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;597pF


30V 24mΩ 1 N-channel 560mW SOT-457 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);18nC@10V/Number;1 N-channel/Pd - Power Dissipation;560mW/RDS(on);24mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);94pF/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;597pF30V 24mΩ 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);18nC@10V/Number;1 N-channel/Pd - Power Dissipation;560mW/RDS(on);24mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);94pF/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;597pF


    30V 24mΩ 1 N-channel 560mW SOT-457 Single FETs, MOSFETs RoHS

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