Nexperia-Single FETs, MOSFETs-PMN27UPH

Description

Drain to Source Voltage;20V/Number;1 P-Channel/Pd - Power Dissipation;1.385W/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;2.34nF


20V 32mΩ@4.5V 1 P-Channel 1.385W SOT-457 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;20V/Number;1 P-Channel/Pd - Power Dissipation;1.385W/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;2.34nF20V... Read more

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    Description

    Drain to Source Voltage;20V/Number;1 P-Channel/Pd - Power Dissipation;1.385W/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;2.34nF


    20V 32mΩ@4.5V 1 P-Channel 1.385W SOT-457 Single FETs, MOSFETs RoHS

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