Nexperia-Single FETs, MOSFETs-PMN40ENEX

Description

Drain to Source Voltage;30V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Pd - Power Dissipation;530mW;4.46W/RDS(on);38mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;294pF


30V 38mΩ@10V 1 N-channel SOT-457 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Pd - Power Dissipation;530mW;4.46W/RDS(on);38mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Pd - Power Dissipation;530mW;4.46W/RDS(on);38mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;294pF


    30V 38mΩ@10V 1 N-channel SOT-457 Single FETs, MOSFETs RoHS

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