Nexperia-Single FETs, MOSFETs-PMN48XPAX

Description

Drain to Source Voltage;20V/Gate Charge(Qg);13nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;530mW;6.25W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.1A/Gate Threshold Voltage (Vgs(th));1.25V/Ciss-Input Capacitance;1nF


20V 55mΩ@4.5V 1 P-Channel SOT-457 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);13nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;530mW;6.25W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.1A/Gate Threshold Voltage (Vgs(th));1.25V/Ciss-Input Capacitance;1nF20V 55mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);13nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;530mW;6.25W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.1A/Gate Threshold Voltage (Vgs(th));1.25V/Ciss-Input Capacitance;1nF


    20V 55mΩ@4.5V 1 P-Channel SOT-457 Single FETs, MOSFETs RoHS

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