Nexperia-Single FETs, MOSFETs-PMPB100XPEAX

Description

Drain to Source Voltage;20V/Gate Charge(Qg);5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;550mW/RDS(on);122mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;388pF


P-Channel 20V 3.2A 550mW Surface Mount SOT-1220

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Drain to Source Voltage;20V/Gate Charge(Qg);5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;550mW/RDS(on);122mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;550mW/RDS(on);122mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;388pF


    P-Channel 20V 3.2A 550mW Surface Mount SOT-1220

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