Nexperia-Single FETs, MOSFETs-PMPB10XNX

Description

Drain to Source Voltage;30V/Gate Charge(Qg);30nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.9W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);119pF/Current - Continuous Drain(Id);13.5A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;1.761nF/Output Capacitance(Coss);137pF


30V 13mΩ@4.5V 1 N-channel 1.9W DFN2020MD-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);30nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.9W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);119pF/Current - Continuous Drain(Id);13.5A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);30nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.9W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);119pF/Current - Continuous Drain(Id);13.5A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;1.761nF/Output Capacitance(Coss);137pF


    30V 13mΩ@4.5V 1 N-channel 1.9W DFN2020MD-6 Single FETs, MOSFETs RoHS

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