Nexperia-Single FETs, MOSFETs-PMPB14XPX

Description

Drain to Source Voltage;12V/Gate Charge(Qg);42nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.8W/RDS(on);19mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);417pF/Current - Continuous Drain(Id);12.7A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;2.303nF


12V 19mΩ@4.5V 1 P-Channel 1.8W DFN2020-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);42nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.8W/RDS(on);19mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);417pF/Current - Continuous Drain(Id);12.7A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);42nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.8W/RDS(on);19mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);417pF/Current - Continuous Drain(Id);12.7A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;2.303nF


    12V 19mΩ@4.5V 1 P-Channel 1.8W DFN2020-6 Single FETs, MOSFETs RoHS

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