Nexperia-Single FETs, MOSFETs-PMPB20XNEAX

Description

Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;460mW;12.5W/RDS(on);20mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.5A/Gate Threshold Voltage (Vgs(th));1.25V/Ciss-Input Capacitance;930pF


20V 20mΩ@4.5V 1 N-channel DFN2020-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;460mW;12.5W/RDS(on);20mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.5A/Gate Threshold Voltage (Vgs(th));1.25V/Ciss-Input Capacitance;930pF20V 20mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;460mW;12.5W/RDS(on);20mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.5A/Gate Threshold Voltage (Vgs(th));1.25V/Ciss-Input Capacitance;930pF


    20V 20mΩ@4.5V 1 N-channel DFN2020-6 Single FETs, MOSFETs RoHS

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