Nexperia-Single FETs, MOSFETs-PMPB20XNEAZ

Description

Drain to Source Voltage;20V/Gate Charge(Qg);9.9nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;460mW/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.1pF/Current - Continuous Drain(Id);7.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;930pF


20V 16mΩ@4.5V 1 N-channel 460mW SOT1220 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;20V/Gate Charge(Qg);9.9nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;460mW/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.1pF/Current - Continuous Drain(Id);7.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);9.9nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;460mW/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.1pF/Current - Continuous Drain(Id);7.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;930pF


    20V 16mΩ@4.5V 1 N-channel 460mW SOT1220 Single FETs, MOSFETs RoHS

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