Nexperia-Single FETs, MOSFETs-PMPB20XPEZ

Description

Drain to Source Voltage;20V/Gate Charge(Qg);45nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.7W/RDS(on);23.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);10.3A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;2.945nF


20V 23.5mΩ@4.5V 1 P-Channel 1.7W DFN2020-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);45nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.7W/RDS(on);23.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);10.3A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);45nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.7W/RDS(on);23.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);10.3A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;2.945nF


    20V 23.5mΩ@4.5V 1 P-Channel 1.7W DFN2020-6 Single FETs, MOSFETs RoHS

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