Nexperia-Single FETs, MOSFETs-PMPB47XP,115

Description

Drain to Source Voltage;30V/Gate Charge(Qg);21nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.7W;12.5W/RDS(on);58mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;1.365nF


30V 58mΩ@4.5V 1 P-Channel DFN2020-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);21nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.7W;12.5W/RDS(on);58mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;1.365nF30V 58mΩ@4.5V 1 P-Channel DFN2020-6 Single... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);21nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.7W;12.5W/RDS(on);58mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;1.365nF


    30V 58mΩ@4.5V 1 P-Channel DFN2020-6 Single FETs, MOSFETs RoHS

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