Nexperia-Single FETs, MOSFETs-PMPB48EP,115

Description

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.7W;12.5W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;860pF


30V 50mΩ@10V 1 P-Channel DFN2020-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.7W;12.5W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;860pF30V 50mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.7W;12.5W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;860pF


    30V 50mΩ@10V 1 P-Channel DFN2020-6 Single FETs, MOSFETs RoHS

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