Nexperia-Single FETs, MOSFETs-PMT560ENEAX

Description

Drain to Source Voltage;100V/Gate Charge(Qg);4.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.9W/RDS(on);715mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;112pF


N-Channel 100V 1.1A 1.9W Surface Mount SOT-223

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Drain to Source Voltage;100V/Gate Charge(Qg);4.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.9W/RDS(on);715mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);4.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.9W/RDS(on);715mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;112pF


    N-Channel 100V 1.1A 1.9W Surface Mount SOT-223

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