Nexperia-Single FETs, MOSFETs-PMV28UNEA215

Description

Drain to Source Voltage;20V/Gate Charge(Qg);6.2nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.05W/RDS(on);24mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);4.7A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;490pF


20V 24mΩ@4.5V 1 N-channel 1.05W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);6.2nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.05W/RDS(on);24mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);4.7A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);6.2nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.05W/RDS(on);24mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);4.7A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;490pF


    20V 24mΩ@4.5V 1 N-channel 1.05W Single FETs, MOSFETs RoHS

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