Nexperia-Single FETs, MOSFETs-PMV30UN2VL

Description

Drain to Source Voltage;20V/Gate Charge(Qg);11nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;490mW/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);62pF/Current - Continuous Drain(Id);5.4A/Gate Threshold Voltage (Vgs(th));650mV/Ciss-Input Capacitance;655pF


20V 32mΩ@4.5V 1 N-channel 490mW SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);11nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;490mW/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);62pF/Current - Continuous Drain(Id);5.4A/Gate Threshold Voltage (Vgs(th));650mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);11nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;490mW/RDS(on);32mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);62pF/Current - Continuous Drain(Id);5.4A/Gate Threshold Voltage (Vgs(th));650mV/Ciss-Input Capacitance;655pF


    20V 32mΩ@4.5V 1 N-channel 490mW SOT-23 Single FETs, MOSFETs RoHS

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