Nexperia-Single FETs, MOSFETs-PMZ370UNE315

Description

Drain to Source Voltage;30V/Gate Charge(Qg);1.16nC@4.5V/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);490mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage (Vgs(th));1.05V/Ciss-Input Capacitance;78pF


30V 490mΩ@4.5V 360mW Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);1.16nC@4.5V/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);490mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage (Vgs(th));1.05V/Ciss-Input Capacitance;78pF30V 490mΩ@4.5V 360mW Single... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);1.16nC@4.5V/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);490mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage (Vgs(th));1.05V/Ciss-Input Capacitance;78pF


    30V 490mΩ@4.5V 360mW Single FETs, MOSFETs RoHS

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