Nexperia-Single FETs, MOSFETs-PMZ550UNE315

Description

Drain to Source Voltage;30V/Gate Charge(Qg);1.1nC@4.5V/Type;N-Channel/Pd - Power Dissipation;400mW/RDS(on);670mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);590mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;30.3pF/Output Capacitance(Coss);5.8pF


30V 670mΩ@4.5V 400mW Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);1.1nC@4.5V/Type;N-Channel/Pd - Power Dissipation;400mW/RDS(on);670mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);590mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;30.3pF/Output... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);1.1nC@4.5V/Type;N-Channel/Pd - Power Dissipation;400mW/RDS(on);670mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);590mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;30.3pF/Output Capacitance(Coss);5.8pF


    30V 670mΩ@4.5V 400mW Single FETs, MOSFETs RoHS

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