Nexperia-Single FETs, MOSFETs-PMZ600UNE315

Description

Drain to Source Voltage;20V/Gate Charge(Qg);700pC@4.5V/Type;N-Channel/Pd - Power Dissipation;715mW/RDS(on);620mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;21.3pF/Output Capacitance(Coss);5.4pF


20V 620mΩ@4.5V 715mW Single FETs, MOSFETs RoHS

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Drain to Source Voltage;20V/Gate Charge(Qg);700pC@4.5V/Type;N-Channel/Pd - Power Dissipation;715mW/RDS(on);620mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;21.3pF/Output... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);700pC@4.5V/Type;N-Channel/Pd - Power Dissipation;715mW/RDS(on);620mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;21.3pF/Output Capacitance(Coss);5.4pF


    20V 620mΩ@4.5V 715mW Single FETs, MOSFETs RoHS

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