Nexperia-Single FETs, MOSFETs-PMZ950UPELYL

Description

Drain to Source Voltage;20V/Gate Charge(Qg);2.1nC@10V/Number;1 P-Channel/Pd - Power Dissipation;360mW/RDS(on);1.02Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;43pF


P-Channel 20V 500mA 360mW Surface Mount SOT-883

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);2.1nC@10V/Number;1 P-Channel/Pd - Power Dissipation;360mW/RDS(on);1.02Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);2.1nC@10V/Number;1 P-Channel/Pd - Power Dissipation;360mW/RDS(on);1.02Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;43pF


    P-Channel 20V 500mA 360mW Surface Mount SOT-883

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