Nexperia-Single FETs, MOSFETs-PMZB550UNEYL

Description

Drain to Source Voltage;30V/Gate Charge(Qg);1.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;310mW/RDS(on);670mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);590mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;30.3pF


N-Channel 30V 590mA 310mW Surface Mount SOT-883-3

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Drain to Source Voltage;30V/Gate Charge(Qg);1.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;310mW/RDS(on);670mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);590mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);1.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;310mW/RDS(on);670mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.2pF/Current - Continuous Drain(Id);590mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;30.3pF


    N-Channel 30V 590mA 310mW Surface Mount SOT-883-3

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