Nexperia-Single FETs, MOSFETs-PSMN009-100B,118

Description

Drain to Source Voltage;100V/Gate Charge(Qg);156nC@10V/Number;1 N-channel/Pd - Power Dissipation;230W/RDS(on);8.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;8.25nF


100V 8.8mΩ@10V 1 N-channel 230W D2PAK Single FETs, MOSFETs RoHS

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Drain to Source Voltage;100V/Gate Charge(Qg);156nC@10V/Number;1 N-channel/Pd - Power Dissipation;230W/RDS(on);8.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;8.25nF100V 8.8mΩ@10V 1... Read more

$14.34 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);156nC@10V/Number;1 N-channel/Pd - Power Dissipation;230W/RDS(on);8.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;8.25nF


    100V 8.8mΩ@10V 1 N-channel 230W D2PAK Single FETs, MOSFETs RoHS

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