Nexperia-Single FETs, MOSFETs-PSMN012-100YLX

Description

Drain to Source Voltage;100V/Gate Charge(Qg);118nC@10V/Number;1 N-channel/Pd - Power Dissipation;238W/RDS(on);11.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);293pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;7.973nF


100V 11.9mΩ@10V 1 N-channel 238W SOT-669 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);118nC@10V/Number;1 N-channel/Pd - Power Dissipation;238W/RDS(on);11.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);293pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);118nC@10V/Number;1 N-channel/Pd - Power Dissipation;238W/RDS(on);11.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);293pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;7.973nF


    100V 11.9mΩ@10V 1 N-channel 238W SOT-669 Single FETs, MOSFETs RoHS

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