Nexperia-Single FETs, MOSFETs-PSMN012-60YS,115

Description

Drain to Source Voltage;60V/Gate Charge(Qg);28.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;89W/RDS(on);11.1mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);59A/Ciss-Input Capacitance;1.685nF


60V 11.1mΩ@10V 1 N-channel 89W SOT-669 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;60V/Gate Charge(Qg);28.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;89W/RDS(on);11.1mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);59A/Ciss-Input Capacitance;1.685nF60V 11.1mΩ@10V 1 N-channel 89W SOT-669... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);28.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;89W/RDS(on);11.1mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);59A/Ciss-Input Capacitance;1.685nF


    60V 11.1mΩ@10V 1 N-channel 89W SOT-669 Single FETs, MOSFETs RoHS

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