Nexperia-Single FETs, MOSFETs-PSMN016-100YS,115

Description

Drain to Source Voltage;100V/Gate Charge(Qg);54nC@10V/Number;1 N-channel/Pd - Power Dissipation;117W/RDS(on);16.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);51A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.744nF


N-Channel 100V 51A 117W LFPAK56(PowerSO-8)

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Drain to Source Voltage;100V/Gate Charge(Qg);54nC@10V/Number;1 N-channel/Pd - Power Dissipation;117W/RDS(on);16.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);51A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.744nFN-Channel 100V 51A... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);54nC@10V/Number;1 N-channel/Pd - Power Dissipation;117W/RDS(on);16.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);51A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.744nF


    N-Channel 100V 51A 117W LFPAK56(PowerSO-8)

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