Nexperia-Single FETs, MOSFETs-PSMN017-80BS,118

Description

Drain to Source Voltage;80V/Gate Charge(Qg);26nC@10V/Number;1 N-channel/Pd - Power Dissipation;103W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.573nF


80V 17mΩ@10V 1 N-channel 103W D2PAK Single FETs, MOSFETs RoHS

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Drain to Source Voltage;80V/Gate Charge(Qg);26nC@10V/Number;1 N-channel/Pd - Power Dissipation;103W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.573nF80V 17mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);26nC@10V/Number;1 N-channel/Pd - Power Dissipation;103W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.573nF


    80V 17mΩ@10V 1 N-channel 103W D2PAK Single FETs, MOSFETs RoHS

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